A dopant-related defect in Te-doped AIInP

Yu Rue Wu*, Wei Jer Sung, Tzu Chi Wen, Shih Chang Lee, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-dopcd AIInP is verified to be a dopant-related defect.

Original languageEnglish
Pages (from-to)4720-4721
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number8 B
StatePublished - 15 Aug 1999


  • AiinP
  • DLTS
  • Deep level
  • Defect
  • Depth profile measurement
  • Dopant
  • Te


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