TY - JOUR
T1 - A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET
AU - Li, Yi-Ming
AU - Chao, Tien Sheng
AU - Sze, S. M.
PY - 2002/8/1
Y1 - 2002/8/1
N2 - In this paper, we present a dynamic domain partition simulation technique for parallel numerical solutions of semiconductor device equations. Based on the adaptive finite volume method, a posteriori error estimation, and monotone iterative algorithm, this dynamic load balancing approach has been successfully developed and implemented on a Linux cluster with message passing interface library. The developed simulator is then applied to calculate the physical characteristics of deep submicron dynamic threshold voltage MOSFET (DTMOS). We simulate DTMOS with two different parallel algorithms: (1) 2D dynamic load balancing for parallel domain decomposition; (2) parallel I-V point simulation. Benchmark results show that a well-designed load balancing simulation can reduce the execution time up to an order of magnitude. Compared with the measured data, the simulated results for a 0.08 μm DTMOS are demonstrated to show the accuracy and efficiency of the method.
AB - In this paper, we present a dynamic domain partition simulation technique for parallel numerical solutions of semiconductor device equations. Based on the adaptive finite volume method, a posteriori error estimation, and monotone iterative algorithm, this dynamic load balancing approach has been successfully developed and implemented on a Linux cluster with message passing interface library. The developed simulator is then applied to calculate the physical characteristics of deep submicron dynamic threshold voltage MOSFET (DTMOS). We simulate DTMOS with two different parallel algorithms: (1) 2D dynamic load balancing for parallel domain decomposition; (2) parallel I-V point simulation. Benchmark results show that a well-designed load balancing simulation can reduce the execution time up to an order of magnitude. Compared with the measured data, the simulated results for a 0.08 μm DTMOS are demonstrated to show the accuracy and efficiency of the method.
KW - Dtmos
KW - Dynamic load balancing
KW - Parallel adaptive FVM
KW - Semiconductor device simulation
UR - http://www.scopus.com/inward/record.url?scp=0036681896&partnerID=8YFLogxK
U2 - 10.1016/S0010-4655(02)00368-5
DO - 10.1016/S0010-4655(02)00368-5
M3 - Article
AN - SCOPUS:0036681896
SN - 0010-4655
VL - 147
SP - 697
EP - 701
JO - Computer Physics Communications
JF - Computer Physics Communications
IS - 1-2
ER -