A distributed charge storage with GeO2 nanodots

T. C. Chang; S. T. Yan; C. H. Hsu; M. T. Tang; J. F. Lee; Ya-Hsiang Tai; Po-Tsun Liu; S. M. Sze

doi:10.1063/1.1697627

A distributed charge storage with GeO₂ nanodots

T. C. Chang^*, S. T. Yan, C. H. Hsu, M. T. Tang, J. F. Lee, Ya-Hsiang Tai, Po-Tsun Liu, S. M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.

Original language	English
Pages (from-to)	2581-2583
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1697627
State	Published - 5 Apr 2004

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title = "A distributed charge storage with GeO2 nanodots",

abstract = "In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.",

author = "Chang, {T. C.} and Yan, {S. T.} and Hsu, {C. H.} and Tang, {M. T.} and Lee, {J. F.} and Ya-Hsiang Tai and Po-Tsun Liu and Sze, {S. M.}",

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T1 - A distributed charge storage with GeO2 nanodots

AU - Chang, T. C.

AU - Yan, S. T.

AU - Hsu, C. H.

AU - Tang, M. T.

AU - Lee, J. F.

AU - Tai, Ya-Hsiang

AU - Liu, Po-Tsun

AU - Sze, S. M.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.

AB - In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.

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U2 - 10.1063/1.1697627

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M3 - Article

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VL - 84

SP - 2581

EP - 2583

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

A distributed charge storage with GeO₂ nanodots

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