A Design Parametric Effect Study on Floating Guard Ring for 1200V SiC Power MOSFET Application

Chia Lung Hung*, Yi Kai Hsiao, Hao Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A study on the simulation and fabrication of 1200 V floating guard rings with different design parameters, aimed at protecting 4H-SiC VDMOSFETs for high power ratings, is presented. The comprehensive parametric effects of the guard ring on the breakdown characteristics have been thoroughly investigated. The breakdown characteristics of various guard ring structures were simulated using TCAD (Technology Computer Aided Design) simulation and measured on the fabricated devices. A concise guideline for designing floating guard rings with high breakdown voltage capability is provided. Finally, it is demonstrated that the breakdown voltage of the fabricated guard ring can reach up to 1560 V for 1200 V applications.

Original languageEnglish
Title of host publicationWiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350337112
DOIs
StatePublished - 2023
Event2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
Duration: 27 Aug 202329 Aug 2023

Publication series

NameWiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
Country/TerritoryTaiwan
CityHsinchu
Period27/08/2329/08/23

Keywords

  • Breakdown Voltage
  • Floating guard ring
  • Silicon Carbide
  • VDMOSFET

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