A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power Transistor

Jian Hsing Lee, Gong Kai Lin, Chun Chih Chen, Li Fan Chen, Chien Wei Wang, Shao Chang Huang, Ching Ho Li, Chih Cherng Liao, Jung Tsun Chuang, Ke Horng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A physical model is derived to characterize the thermal safe-operating area (T-SOA) of power transistor. This model provides a concise methodology to get the precise and instant solutions of the temperature, and time to failure corresponding to IV for power transistor during the T-SOA measurement.

Original languageEnglish
Title of host publication2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665456722
DOIs
StatePublished - 2023
Event61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States
Duration: 26 Mar 202330 Mar 2023

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2023-March
ISSN (Print)1541-7026

Conference

Conference61st IEEE International Reliability Physics Symposium, IRPS 2023
Country/TerritoryUnited States
CityMonterey
Period26/03/2330/03/23

Keywords

  • Electrothermal (ETO)
  • Joule-heating
  • Power Transistor
  • Thermal Runaway
  • Thermal Safe-Operating Area (TSOA)

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