A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

Kai Tak Lam*, Haixia Da, Sai Kong Chin, G. Samudra, Yee Chia Yeo, Gengchiau Liang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Novel device structures and electronic materials are required to further enhance the performance of digital circuits after the current MOSFET technology reaches its physical limits. While tunneling mechanism degrades the short channel MOSFET performance, it can be utilized as the major device operation in tunneling field-effect transistors (TFET) with promising features such as lower sub-threshold swing and OFF-state current (IOFF). Furthermore, semiconducting graphene nanoribbon (GNR) has been proposed as a potential electronic material for TFET application due to its unique properties such as ultra-thin body structure and high carrier mobility. A small bandgap (E G) material near the source-channel interface can be introduced to form heterojunction (HJ) which leads to a larger ION [1-3]. Therefore, in this work, we investigate the impact of the length and E G of this HJ region on the device performance of graphene nanoribbon TFET.

Original languageEnglish
Title of host publication68th Device Research Conference, DRC 2010
Pages79-80
Number of pages2
DOIs
StatePublished - 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: 21 Jun 201023 Jun 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference68th Device Research Conference, DRC 2010
Country/TerritoryUnited States
CityNotre Dame, IN
Period21/06/1023/06/10

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