A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

Chih Yi Yang; Chin Han Chung; Wei Yu; Cheng Jun Ma; Sih Rong Wu; Abhisek Dixit; Ching Ting Lee; Edward Yi Chang

doi:10.1109/TDMR.2022.3173000

A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

Chih Yi Yang^*, Chin Han Chung, Wei Yu, Cheng Jun Ma, Sih Rong Wu, Abhisek Dixit, Ching Ting Lee, Edward Yi Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

Original language	English
Pages (from-to)	276-281
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	22
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2022.3173000
State	Published - 1 Jun 2022

Keywords

dynamic RON
GaN on Si
in-situ SiN
MISHEMTs
power device
simulation
total ionizing dose
VTH shifting

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10.1109/TDMR.2022.3173000

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title = "A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT",

abstract = "In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.",

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AU - Yang, Chih Yi

AU - Chung, Chin Han

AU - Yu, Wei

AU - Ma, Cheng Jun

AU - Wu, Sih Rong

AU - Dixit, Abhisek

AU - Lee, Ching Ting

AU - Chang, Edward Yi

PY - 2022/6/1

Y1 - 2022/6/1

N2 - In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

AB - In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

KW - dynamic RON

KW - GaN on Si

KW - in-situ SiN

KW - MISHEMTs

KW - power device

KW - simulation

KW - total ionizing dose

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JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

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ER -

A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

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