A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

Chih Yi Yang*, Chin Han Chung, Wei Yu, Cheng Jun Ma, Sih Rong Wu, Abhisek Dixit, Ching Ting Lee, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

Original languageEnglish
Pages (from-to)276-281
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume22
Issue number2
DOIs
StatePublished - 1 Jun 2022

Keywords

  • dynamic RON
  • GaN on Si
  • in-situ SiN
  • MISHEMTs
  • power device
  • simulation
  • total ionizing dose
  • VTH shifting

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