A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

Guang Li Luo; Shih Chiang Huang; Cheng Ting Chung; Dawei Heh; Chao-Hsin Chien; Chao Ching Cheng; Yao Jen Lee; Wen Fa Wu; Chiung Chih Hsu; Mei Ling Kuo; Jay Yi Yao; Mao Nan Chang; Chee Wee Liu; Chen-Ming Hu; Chun Yen Chang; Fu Liang Yang

doi:10.1109/IEDM.2009.5424246

A comprehensive study of Ge_1-xSi_x on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

Guang Li Luo^*, Shih Chiang Huang, Cheng Ting Chung, Dawei Heh, Chao-Hsin Chien, Chao Ching Cheng, Yao Jen Lee, Wen Fa Wu, Chiung Chih Hsu, Mei Ling Kuo, Jay Yi Yao, Mao Nan Chang, Chee Wee Liu, Chen-Ming Hu, Chun Yen Chang, Fu Liang Yang

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

For the first time, growth of high-quality Ge-rich Ge_1-xSi _x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge_1-xSi _x and a better thermal stability of the nickel germanide on Ge _1-xSi_x were observed. A higher rectifying ratio with a reduced diode leakage current in n⁺-Ge_1-xSi _x/p-Ge1-xSix is compared with n⁺-Ge/p-Ge. These results indicate that it is suitable for Ge_1-xSi_x to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	29.5.1-29.5.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424246
State	Published - 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	7/12/09 → 9/12/09

Access to Document

10.1109/IEDM.2009.5424246

Cite this

Luo, G. L., Huang, S. C., Chung, C. T., Heh, D., Chien, C.-H., Cheng, C. C., Lee, Y. J., Wu, W. F., Hsu, C. C., Kuo, M. L., Yao, J. Y., Chang, M. N., Liu, C. W., Hu, C.-M., Chang, C. Y., & Yang, F. L. (2009). A comprehensive study of Ge_1-xSi_x on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 29.5.1-29.5.4). Article 5424246 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424246

@inproceedings{6e55055e26a54052b56edac8a6233471,

title = "A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage",

abstract = "For the first time, growth of high-quality Ge-rich Ge1-xSi x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSi x and a better thermal stability of the nickel germanide on Ge 1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSi x/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.",

author = "Luo, {Guang Li} and Huang, {Shih Chiang} and Chung, {Cheng Ting} and Dawei Heh and Chao-Hsin Chien and Cheng, {Chao Ching} and Lee, {Yao Jen} and Wu, {Wen Fa} and Hsu, {Chiung Chih} and Kuo, {Mei Ling} and Yao, {Jay Yi} and Chang, {Mao Nan} and Liu, {Chee Wee} and Chen-Ming Hu and Chang, {Chun Yen} and Yang, {Fu Liang}",

year = "2009",

doi = "10.1109/IEDM.2009.5424246",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "29.5.1--29.5.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

}

Luo, GL, Huang, SC, Chung, CT, Heh, D, Chien, C-H, Cheng, CC, Lee, YJ, Wu, WF, Hsu, CC, Kuo, ML, Yao, JY, Chang, MN, Liu, CW, Hu, C-M, Chang, CY & Yang, FL 2009, A comprehensive study of Ge_1-xSi_x on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424246, Technical Digest - International Electron Devices Meeting, IEDM, pp. 29.5.1-29.5.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424246

A comprehensive study of Ge_1-xSi_x on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage. / Luo, Guang Li; Huang, Shih Chiang; Chung, Cheng Ting et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 29.5.1-29.5.4 5424246 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

AU - Luo, Guang Li

AU - Huang, Shih Chiang

AU - Chung, Cheng Ting

AU - Heh, Dawei

AU - Chien, Chao-Hsin

AU - Cheng, Chao Ching

AU - Lee, Yao Jen

AU - Wu, Wen Fa

AU - Hsu, Chiung Chih

AU - Kuo, Mei Ling

AU - Yao, Jay Yi

AU - Chang, Mao Nan

AU - Liu, Chee Wee

AU - Hu, Chen-Ming

AU - Chang, Chun Yen

AU - Yang, Fu Liang

PY - 2009

Y1 - 2009

N2 - For the first time, growth of high-quality Ge-rich Ge1-xSi x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSi x and a better thermal stability of the nickel germanide on Ge 1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSi x/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.

AB - For the first time, growth of high-quality Ge-rich Ge1-xSi x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSi x and a better thermal stability of the nickel germanide on Ge 1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSi x/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=77952330177&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2009.5424246

DO - 10.1109/IEDM.2009.5424246

M3 - Conference contribution

AN - SCOPUS:77952330177

SN - 9781424456406

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 29.5.1-29.5.4

BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

Luo GL, Huang SC, Chung CT, Heh D, Chien CH, Cheng CC et al. A comprehensive study of Ge_1-xSi_x on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 29.5.1-29.5.4. 5424246. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424246