A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions

Hsin Hui Huang; Tzu Yun Wu; Yueh Hua Chu; Ming Hung Wu; Chien Hua Hsu; Heng Yuan Lee; Shyh Shyuan Sheu; Wei Chung Lo; Tuo-Hung Hou

doi:10.1109/IEDM19573.2019.8993592

A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions

Hsin Hui Huang, Tzu Yun Wu, Yueh Hua Chu, Ming Hung Wu, Chien Hua Hsu, Heng Yuan Lee, Shyh Shyuan Sheu, Wei Chung Lo, Tuo-Hung Hou^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

25 Scopus citations

Abstract

A modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/ capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	4
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993592
State	Published - Dec 2019
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 7 Dec 2019 → 11 Dec 2019

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	7/12/19 → 11/12/19

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10.1109/IEDM19573.2019.8993592

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Huang, H. H., Wu, T. Y., Chu, Y. H., Wu, M. H., Hsu, C. H., Lee, H. Y., Sheu, S. S., Lo, W. C., & Hou, T.-H. (2019). A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993592 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993592

@inproceedings{50ee2202b5524323a42a28e39a4147be,

title = "A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions",

abstract = "A modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/ capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.",

author = "Huang, {Hsin Hui} and Wu, {Tzu Yun} and Chu, {Yueh Hua} and Wu, {Ming Hung} and Hsu, {Chien Hua} and Lee, {Heng Yuan} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Tuo-Hung Hou",

year = "2019",

month = dec,

doi = "10.1109/IEDM19573.2019.8993592",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",

address = "美國",

note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

}

Huang, HH, Wu, TY, Chu, YH, Wu, MH, Hsu, CH, Lee, HY, Sheu, SS, Lo, WC & Hou, T-H 2019, A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993592, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993592

A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions. / Huang, Hsin Hui; Wu, Tzu Yun; Chu, Yueh Hua et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993592 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hsu, Chien Hua

AU - Lee, Heng Yuan

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Hou, Tuo-Hung

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AB - A modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/ capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.

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M3 - Conference contribution

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

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T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

Y2 - 7 December 2019 through 11 December 2019

ER -

A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions

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