@inproceedings{d63b22631d89477896f03522de580af7,
title = "A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs",
abstract = "This paper clarifies for the first time the origin of ferroelectricity in the Negative Capacitance Field-Effect Transistors (NCFETs) by molecular dynamics (MD) simulation. MD simulation considering atomic interactions between all atoms enables accurate predictions for the microstructure even at all interfaces. By incorporating the results from MD simulations into a kinetic model, it is able to predict the conditions of crystallization and phase transition during RTP and cooling processes that govern ferroelectricity in FETs. Our simulation reveals that the comparable interfacial energy between o-and t-phase, and in-plane tensile stress from metal capping or interfacial layers (ILs) enable more phase transition from t-to o-phase, and more ferroelectricity in NCFETs. Finally, design methodology to maintain the electric variation of NCFETs is also proposed.",
author = "Tang, {Y. T.} and Fang, {C. L.} and Kao, {Y. C.} and N. Modolo and Su, {C. J.} and Tian-Li Wu and Kao, {K. H.} and Wu, {P. J.} and Hsaio, {S. W.} and Artur Useinov and Pin Su and Wu, {W. F.} and Huang, {G. W.} and Shieh, {J. M.} and Yeh, {W. K.} and Wang, {Y. H.}",
year = "2019",
month = jun,
doi = "10.23919/VLSIT.2019.8776508",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "T222--T223",
booktitle = "2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers",
address = "美國",
note = "39th Symposium on VLSI Technology, VLSI Technology 2019 ; Conference date: 09-06-2019 Through 14-06-2019",
}