A comprehensive evaluation of the performance of fin-type epitaxial tunnel layer (ETL) tunnel FET

Po Shao Lin, Bing-Yue Tsui

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations

    Abstract

    Epitaxial tunnel layer tunnel FET (ETL TFET) is one of the promising device for ultra-low power applications. In this work, device performance between planar ETL TFET and Fin ETL TFET are evaluated. For n-type TFET, the electric field enhancement in Si region due to the fin structure results in Si-to-Ge and Si-to-Si tunneling at low voltage so that the subthreshold swing is degraded. For the p-type TFET, different TFET structures show similar subthreshold swing because only Ge-to-Ge tunneling occurs. In comparison with the planar TFET, Fin TFET exhibits 35% improvement and 40% degradation on conduction current for n-type and p-type TFET, respectively.

    Original languageEnglish
    Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1-2
    Number of pages2
    ISBN (Electronic)9781538629079
    DOIs
    StatePublished - 1 Dec 2017
    Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
    Duration: 18 Oct 201720 Oct 2017

    Publication series

    NameEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    Volume2017-January

    Conference

    Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
    Country/TerritoryTaiwan
    CityHsinchu
    Period18/10/1720/10/17

    Keywords

    • Band-to-band tunneling (BTBT)
    • Fin FET
    • Subthreshold swing
    • Tunnel FET

    Fingerprint

    Dive into the research topics of 'A comprehensive evaluation of the performance of fin-type epitaxial tunnel layer (ETL) tunnel FET'. Together they form a unique fingerprint.

    Cite this