A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Wei Xiang You; Pin Su

doi:10.1109/TED.2016.2564424

A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Wei Xiang You, Pin Su^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

Original language	English
Article number	7482768
Pages (from-to)	2971-2974
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	7
DOIs	https://doi.org/10.1109/TED.2016.2564424
State	Published - Jul 2016

Keywords

2-D semiconductors
high-K gate dielectrics
molybdenum disulphide (MoS2)
short-channel effects
subthreshold current model
transition metal dichalcogenide (TMD)

Access to Document

10.1109/TED.2016.2564424

Cite this

@article{21c7d870b2724176bf49466b2ba01414,

title = "A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors",

abstract = "This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.",

keywords = "2-D semiconductors, high-K gate dielectrics, molybdenum disulphide (MoS2), short-channel effects, subthreshold current model, transition metal dichalcogenide (TMD)",

author = "You, {Wei Xiang} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = jul,

doi = "10.1109/TED.2016.2564424",

language = "English",

volume = "63",

pages = "2971--2974",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

AU - You, Wei Xiang

AU - Su, Pin

PY - 2016/7

Y1 - 2016/7

N2 - This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

AB - This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

KW - 2-D semiconductors

KW - high-K gate dielectrics

KW - molybdenum disulphide (MoS2)

KW - short-channel effects

KW - subthreshold current model

KW - transition metal dichalcogenide (TMD)

UR - http://www.scopus.com/inward/record.url?scp=84971571381&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2564424

DO - 10.1109/TED.2016.2564424

M3 - Article

AN - SCOPUS:84971571381

SN - 0018-9383

VL - 63

SP - 2971

EP - 2974

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

M1 - 7482768

ER -

A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this