A Compact Model of Antiferroelectric Capacitor

Chien Ting Tung*, Sayeef Salahuddin, Chenming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we develop a compact model of antiferroelectric (AFE) capacitors. AFE material, similar to the ferroelectric (FE) material, is a good candidate for non-volatile memory applications. Unlike FE materials, there are no good compact models that can describe the AFE materials for circuit simulation. In this study, we consider the AFE material as a collection of multiple crystal groups. For each group, the polarization may switch from zero to positive or negative polarization and vice versa depending on the electric field polarity. This switching is modeled by a local field-dependent switching rate, which has a statistical distribution among the groups. We implement this model in Verilog-A and run it on a commercial SPICE simulator to demonstrate this model’s capability to reproduce the published experimental data of the dependency of the AFE capacitor switching on the writing pulse width and voltage and the major and minor loops behavior are demonstrated.

Original languageEnglish
Pages (from-to)316-318
Number of pages3
JournalIeee Electron Device Letters
Volume43
Issue number2
DOIs
StatePublished - 1 Feb 2022

Keywords

  • Capacitors
  • Hysteresis
  • Integrated circuit modeling
  • Iron
  • Mathematical models
  • Nonvolatile memory
  • Switches

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