A compact model for rapidly shrinking MOSFETs

Chen-Ming Hu

doi:10.1109/IEDM.2001.979485

A compact model for rapidly shrinking MOSFETs

Chen-Ming Hu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.

Original language	English
Pages (from-to)	285-288
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979485
State	Published - 1 Dec 2001
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2 Dec 2001 → 5 Dec 2001

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title = "A compact model for rapidly shrinking MOSFETs",

abstract = "BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.",

author = "Chen-Ming Hu",

year = "2001",

month = dec,

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doi = "10.1109/IEDM.2001.979485",

language = "English",

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journal = "Technical Digest - International Electron Devices Meeting",

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note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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T1 - A compact model for rapidly shrinking MOSFETs

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PY - 2001/12/1

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N2 - BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.

AB - BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.

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DO - 10.1109/IEDM.2001.979485

M3 - Conference article

AN - SCOPUS:0035717786

SN - 0163-1918

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EP - 288

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

A compact model for rapidly shrinking MOSFETs

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