A CMOS micromachined capacitive tactile sensor with compensation of process variations

Hao Cheng Tsai, Tien Keng Wu, Tsung Heng Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper presents a standard-CMOS-fabricated capacitive tactile sensor with high sensitivity and a sensing circuit with compensation of process variations. Both of the sensor and sensing circuit are fabricated on a single chip by a TSMC 0.35μm CMOS MEMS technology. In order to create high sensitivity of the sensor for sensing circuit, a T-shaped protrusion is proposed. This sensor is constituted by the metal layer and the dielectric layer without extra thin film deposition, and can be completed with few simple post-processing steps. With the fully differential correlated double sampling capacitor-to-voltage converter (CDS-CVC) and reference capacitor correction, process variations are compensated. The measured sensitivity of the sensing circuit is 18mV/fF.

Original languageEnglish
Title of host publication2013 IEEE Biomedical Circuits and Systems Conference, BioCAS 2013
Pages342-345
Number of pages4
DOIs
StatePublished - 2013
Event2013 IEEE Biomedical Circuits and Systems Conference, BioCAS 2013 - Rotterdam, Netherlands
Duration: 31 Oct 20132 Nov 2013

Publication series

Name2013 IEEE Biomedical Circuits and Systems Conference, BioCAS 2013

Conference

Conference2013 IEEE Biomedical Circuits and Systems Conference, BioCAS 2013
Country/TerritoryNetherlands
CityRotterdam
Period31/10/132/11/13

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