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A CMOS-MEMS Pressure Sensor with Integrated Front-End for Chemical Vapor Deposition Systems

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, a CMOS-MEMS capacitive pressure sensor is designed for low-pressure chemical vapor deposition (LPCVD) systems. A buffer layer is utilized in the proposed pressure transducer to effectively protect the sensing diaphragm from breaking down while maintaining high linearity with a compact dimension. A low-power front-end readout circuit is implemented on the same chip to convert the capacitance variance to digital outputs according to the pressure change in the chemical vapor deposition process, near vacuum in this design. The presented device is fabricated through UMC 0.18μm 1P6M CMOS process, and in-house post-processes. The chip size is 1.5×1.5 mm2. Experimental results show that the sensitivity of 0.655 fF/Pa is realized in the range of 0 - 600 Pa.

Original languageEnglish
Title of host publication2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350303872
DOIs
StatePublished - 2023
Event2023 IEEE SENSORS, SENSORS 2023 - Vienna, Austria
Duration: 29 Oct 20231 Nov 2023

Publication series

NameProceedings of IEEE Sensors
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229

Conference

Conference2023 IEEE SENSORS, SENSORS 2023
Country/TerritoryAustria
CityVienna
Period29/10/231/11/23

Keywords

  • Capacitive pressure sensor
  • CMOS MEMS
  • Time-to-digital converter

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