A Charge-Based Capacitance Model of Short-Channel MOSFET's

Steve S. Chung*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    11 Scopus citations


    A new quasistatic two-dimensional (2-D) intrinsic capacitance model for short-channel MOSFET's has been proposed. It was derived based on a physically based charge sharing scheme and implemented using a quasistatic solution of a MOS device simulator. 2-D field-induced mobility degradation, velocity saturation, and short channel effects are included in the model. In this model, charge conservation holds and channel charge partitioning are properly treated. The simulation results clearly show the importance of 2-D field-induced effects to short-channel MOS devices. Comparison of the simulated results with reported experimentally measured data shows that the proposed model is far more reliable than the analytical model. The proposed method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analog MOS integrated circuits.

    Original languageEnglish
    Article number21813
    Pages (from-to)1-7
    Number of pages7
    JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
    Issue number1
    StatePublished - 1 Jan 1989


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