A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Bae Horng Chen; Jeng Hua Wei; Po Yuan Lo; Hung Hsiang Wang; Ming Jinn Lai; Ming Jinn Tsai; Tien-Sheng Chao; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1016/j.sse.2006.05.026

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Bae Horng Chen, Jeng Hua Wei, Po Yuan Lo, Hung Hsiang Wang, Ming Jinn Lai, Ming Jinn Tsai, Tien-Sheng Chao^*, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.

Original language	English
Pages (from-to)	1341-1348
Number of pages	8
Journal	Solid-State Electronics
Volume	50
Issue number	7-8
DOIs	https://doi.org/10.1016/j.sse.2006.05.026
State	Published - 1 Jul 2006

Keywords

Ambipolar CNT-FETs
Carbon nanotube field effect transistor (CNT-FET)
Double-gate CNT-FET
Modulate
n- or p-type

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10.1016/j.sse.2006.05.026

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title = "A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects",

abstract = "In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.",

keywords = "Ambipolar CNT-FETs, Carbon nanotube field effect transistor (CNT-FET), Double-gate CNT-FET, Modulate, n- or p-type",

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AU - Chen, Bae Horng

AU - Wei, Jeng Hua

AU - Lo, Po Yuan

AU - Wang, Hung Hsiang

AU - Lai, Ming Jinn

AU - Tsai, Ming Jinn

AU - Chao, Tien-Sheng

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2006/7/1

Y1 - 2006/7/1

N2 - In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.

AB - In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.

KW - Ambipolar CNT-FETs

KW - Carbon nanotube field effect transistor (CNT-FET)

KW - Double-gate CNT-FET

KW - Modulate

KW - n- or p-type

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JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7-8

ER -

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Abstract

Keywords

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