A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Bae Horng Chen; Jeng Hua Wei; Po Yuan Lo; Hung Hsiang Wang; Ming Jinn Lai; Ming Jinn Tsai; Tien-Sheng Chao; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1016/j.sse.2006.05.026

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Bae Horng Chen, Jeng Hua Wei, Po Yuan Lo, Hung Hsiang Wang, Ming Jinn Lai, Ming Jinn Tsai, Tien-Sheng Chao^*, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.

Original language	English
Pages (from-to)	1341-1348
Number of pages	8
Journal	Solid-State Electronics
Volume	50
Issue number	7-8
DOIs	https://doi.org/10.1016/j.sse.2006.05.026
State	Published - 1 Jul 2006

Keywords

Ambipolar CNT-FETs
Carbon nanotube field effect transistor (CNT-FET)
Double-gate CNT-FET
Modulate
n- or p-type

Access to Document

10.1016/j.sse.2006.05.026

Cite this

@article{8533175f197843bb86b1065384c644c2,

title = "A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects",

abstract = "In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.",

keywords = "Ambipolar CNT-FETs, Carbon nanotube field effect transistor (CNT-FET), Double-gate CNT-FET, Modulate, n- or p-type",

author = "Chen, {Bae Horng} and Wei, {Jeng Hua} and Lo, {Po Yuan} and Wang, {Hung Hsiang} and Lai, {Ming Jinn} and Tsai, {Ming Jinn} and Tien-Sheng Chao and Horng-Chih Lin and Huang, {Tiao Yuan}",

year = "2006",

month = jul,

day = "1",

doi = "10.1016/j.sse.2006.05.026",

language = "English",

volume = "50",

pages = "1341--1348",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "7-8",

}

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects. / Chen, Bae Horng; Wei, Jeng Hua; Lo, Po Yuan; Wang, Hung Hsiang; Lai, Ming Jinn; Tsai, Ming Jinn; Chao, Tien-Sheng ; Lin, Horng-Chih; Huang, Tiao Yuan.

In: Solid-State Electronics, Vol. 50, No. 7-8, 01.07.2006, p. 1341-1348.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

AU - Chen, Bae Horng

AU - Wei, Jeng Hua

AU - Lo, Po Yuan

AU - Wang, Hung Hsiang

AU - Lai, Ming Jinn

AU - Tsai, Ming Jinn

AU - Chao, Tien-Sheng

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2006/7/1

Y1 - 2006/7/1

N2 - In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.

AB - In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.

KW - Ambipolar CNT-FETs

KW - Carbon nanotube field effect transistor (CNT-FET)

KW - Double-gate CNT-FET

KW - Modulate

KW - n- or p-type

UR - http://www.scopus.com/inward/record.url?scp=33747184510&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2006.05.026

DO - 10.1016/j.sse.2006.05.026

M3 - Article

AN - SCOPUS:33747184510

VL - 50

SP - 1341

EP - 1348

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7-8

ER -

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this