Abstract
In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.
Original language | English |
---|---|
Pages (from-to) | 1341-1348 |
Number of pages | 8 |
Journal | Solid-State Electronics |
Volume | 50 |
Issue number | 7-8 |
DOIs | |
State | Published - 1 Jul 2006 |
Keywords
- Ambipolar CNT-FETs
- Carbon nanotube field effect transistor (CNT-FET)
- Double-gate CNT-FET
- Modulate
- n- or p-type