A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects

Jyh-Chyurn Guo*, Teng Yang Tan

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    43 Scopus citations

    Abstract

    A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional π-model. Good match with the measured S-parameters,L(ω), Re(Zin(ω)), and Q(ω) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.

    Original languageEnglish
    Pages (from-to)413-421
    Number of pages9
    JournalIEEE Transactions on Electron Devices
    Volume53
    Issue number3
    DOIs
    StatePublished - 1 Mar 2006

    Keywords

    • Broadband
    • Inductor
    • Lossy substrate
    • Scalable

    Fingerprint

    Dive into the research topics of 'A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects'. Together they form a unique fingerprint.

    Cite this