A body-contact SOI MOSFET model for circuit simulation

Pin Su; S. K.H. Fung; F. Assaderaghi; Chen-Ming Hu

doi:10.1109/SOI.1999.819853

A body-contact SOI MOSFET model for circuit simulation

Pin Su, S. K.H. Fung, F. Assaderaghi, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.

Original language	English
Title of host publication	1999 IEEE International SOI Conference, SOI 1999 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	50-51
Number of pages	2
ISBN (Print)	0780354567, 9780780354562
DOIs	https://doi.org/10.1109/SOI.1999.819853
State	Published - 1 Jan 1999
Event	25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999 - Rohnert Park, United States Duration: 4 Oct 1999 → 7 Oct 1999

Publication series

Name	1999 IEEE International SOI Conference, SOI 1999 - Proceedings

Conference

Conference	25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999
Country/Territory	United States
City	Rohnert Park
Period	4/10/99 → 7/10/99

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10.1109/SOI.1999.819853

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Su, P., Fung, S. K. H., Assaderaghi, F., & Hu, C.-M. (1999). A body-contact SOI MOSFET model for circuit simulation. In 1999 IEEE International SOI Conference, SOI 1999 - Proceedings (pp. 50-51). Article 819853 (1999 IEEE International SOI Conference, SOI 1999 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.1999.819853

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title = "A body-contact SOI MOSFET model for circuit simulation",

abstract = "Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.",

author = "Pin Su and Fung, {S. K.H.} and F. Assaderaghi and Chen-Ming Hu",

year = "1999",

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Su, P, Fung, SKH, Assaderaghi, F & Hu, C-M 1999, A body-contact SOI MOSFET model for circuit simulation. in 1999 IEEE International SOI Conference, SOI 1999 - Proceedings., 819853, 1999 IEEE International SOI Conference, SOI 1999 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 50-51, 25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999, Rohnert Park, United States, 4/10/99. https://doi.org/10.1109/SOI.1999.819853

A body-contact SOI MOSFET model for circuit simulation. / Su, Pin; Fung, S. K.H.; Assaderaghi, F. et al.
1999 IEEE International SOI Conference, SOI 1999 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 1999. p. 50-51 819853 (1999 IEEE International SOI Conference, SOI 1999 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.

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T3 - 1999 IEEE International SOI Conference, SOI 1999 - Proceedings

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ER -

A body-contact SOI MOSFET model for circuit simulation

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