A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

Faiz Aizad Fatah; Yueh Chin Lin; Ren Xuan Liu; Kai Chun Yang; Tai We Lin; Heng-Tung Hsu; Jung Hsiang Yang; Yasuyuki Miyamoto; Hiroshi Iwai; Chen-Ming Hu; Sayeef Salahuddin; Edward Yi Chang

doi:10.7567/APEX.9.026502

A 60-nm-thick enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

Faiz Aizad Fatah, Yueh Chin Lin, Ren Xuan Liu, Kai Chun Yang, Tai We Lin, Heng-Tung Hsu, Jung Hsiang Yang, Yasuyuki Miyamoto, Hiroshi Iwai, Chen-Ming Hu, Sayeef Salahuddin, Edward Yi Chang

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Abstract

A 60-nm-thick E-mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69mV/decade, a lower DIBL of 30mV/V, an ION/IOFF ratio above 1.2 × 10⁴ at VDS = 0.5V and a high fT of 378GHz and fmax of 214GHz at VDS = 1.0V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.

Original language	English
Article number	026502
Journal	Applied Physics Express
Volume	9
Issue number	2
DOIs	https://doi.org/10.7567/APEX.9.026502
State	Published - 1 Feb 2016

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Fatah, F. A., Lin, Y. C., Liu, R. X., Yang, K. C., Lin, T. W., Hsu, H.-T., Yang, J. H., Miyamoto, Y., Iwai, H., Hu, C.-M., Salahuddin, S., & Chang, E. Y. (2016). A 60-nm-thick enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications. Applied Physics Express, 9(2), Article 026502. https://doi.org/10.7567/APEX.9.026502

@article{e58c069fcdc94511ace4c66155e24864,

title = "A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications",

abstract = "A 60-nm-thick E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69mV/decade, a lower DIBL of 30mV/V, an ION/IOFF ratio above 1.2 × 104 at VDS = 0.5V and a high fT of 378GHz and fmax of 214GHz at VDS = 1.0V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.",

author = "Fatah, {Faiz Aizad} and Lin, {Yueh Chin} and Liu, {Ren Xuan} and Yang, {Kai Chun} and Lin, {Tai We} and Heng-Tung Hsu and Yang, {Jung Hsiang} and Yasuyuki Miyamoto and Hiroshi Iwai and Chen-Ming Hu and Sayeef Salahuddin and Chang, {Edward Yi}",

year = "2016",

month = feb,

day = "1",

doi = "10.7567/APEX.9.026502",

language = "English",

volume = "9",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "2",

}

Fatah, FA, Lin, YC, Liu, RX, Yang, KC, Lin, TW, Hsu, H-T, Yang, JH, Miyamoto, Y, Iwai, H, Hu, C-M, Salahuddin, S & Chang, EY 2016, 'A 60-nm-thick enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications', Applied Physics Express, vol. 9, no. 2, 026502. https://doi.org/10.7567/APEX.9.026502

A 60-nm-thick enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications. / Fatah, Faiz Aizad; Lin, Yueh Chin; Liu, Ren Xuan et al.
In: Applied Physics Express, Vol. 9, No. 2, 026502, 01.02.2016.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

AU - Fatah, Faiz Aizad

AU - Lin, Yueh Chin

AU - Liu, Ren Xuan

AU - Yang, Kai Chun

AU - Lin, Tai We

AU - Hsu, Heng-Tung

AU - Yang, Jung Hsiang

AU - Miyamoto, Yasuyuki

AU - Iwai, Hiroshi

AU - Hu, Chen-Ming

AU - Salahuddin, Sayeef

AU - Chang, Edward Yi

PY - 2016/2/1

Y1 - 2016/2/1

N2 - A 60-nm-thick E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69mV/decade, a lower DIBL of 30mV/V, an ION/IOFF ratio above 1.2 × 104 at VDS = 0.5V and a high fT of 378GHz and fmax of 214GHz at VDS = 1.0V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.

AB - A 60-nm-thick E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69mV/decade, a lower DIBL of 30mV/V, an ION/IOFF ratio above 1.2 × 104 at VDS = 0.5V and a high fT of 378GHz and fmax of 214GHz at VDS = 1.0V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.

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U2 - 10.7567/APEX.9.026502

DO - 10.7567/APEX.9.026502

M3 - Article

AN - SCOPUS:84956985577

SN - 1882-0778

VL - 9

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

M1 - 026502

ER -

A 60-nm-thick enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

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