@inproceedings{7a0dd34e9c3c433b80b807a4ef751513,
title = "A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications",
abstract = "This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.",
keywords = "Doherty power amplifier, V-band, gallium nitride (GaN), high-electron-mobility transistor (HEMT), millimeter-wave",
author = "Tsai, {Jeng Han} and Lin, {Yu Hui} and Tsao, {Yi Fan} and Yuan Wang and Arpan Desai and Chiu, {Ping Hsun} and Hsu, {Heng Tung}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 31st Asia-Pacific Microwave Conference, APMC 2023 ; Conference date: 05-12-2023 Through 08-12-2023",
year = "2023",
doi = "10.1109/APMC57107.2023.10439724",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "171--173",
booktitle = "2023 Asia-Pacific Microwave Conference, APMC 2023",
address = "美國",
}