A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications

Jeng Han Tsai*, Yu Hui Lin, Yi Fan Tsao, Yuan Wang, Arpan Desai, Ping Hsun Chiu, Heng Tung Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.

Original languageEnglish
Title of host publication2023 Asia-Pacific Microwave Conference, APMC 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)9781665494182
StatePublished - 2023
Event31st Asia-Pacific Microwave Conference, APMC 2023 - Taipei, Taiwan
Duration: 5 Dec 20238 Dec 2023

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
ISSN (Electronic)2690-3946


Conference31st Asia-Pacific Microwave Conference, APMC 2023


  • Doherty power amplifier
  • V-band
  • gallium nitride (GaN)
  • high-electron-mobility transistor (HEMT)
  • millimeter-wave


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