A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS

Chien Nan Kuo, Yun Hao Liu, Ruo Hsuan Gao

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


A reflection amplifier is designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band. Different from the conventional configurations, a proposed capacitive transmission line at the transistor source port results in negative input resistance and return gain. The return gain is further enhanced by adding an inductor at the drain port. The fabricated die occupies 0.38 mm² and consumes low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.

Original languageEnglish
JournalIEEE Microwave and Wireless Components Letters
StateAccepted/In press - 2021


  • Gain
  • Gain measurement
  • Impedance
  • Logic gates
  • Millimeter-wave (mm-Wave)
  • negative resistance
  • reflection amplifier
  • Resistance
  • return gain
  • Transmission line measurements
  • transmission line.
  • Voltage measurement


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