A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS

Chien Nan Kuo; Yun Hao Liu; Ruo Hsuan Gao

doi:10.1109/LMWC.2021.3125313

A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS

Chien Nan Kuo, Yun Hao Liu, Ruo Hsuan Gao

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A reflection amplifier is designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band. Different from the conventional configurations, a proposed capacitive transmission line at the transistor source port results in negative input resistance and return gain. The return gain is further enhanced by adding an inductor at the drain port. The fabricated die occupies 0.38 mm² and consumes low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.

Original language	English
Journal	IEEE Microwave and Wireless Components Letters
DOIs	https://doi.org/10.1109/LMWC.2021.3125313
State	Accepted/In press - 2021

Keywords

Gain
Gain measurement
Impedance
Logic gates
Millimeter-wave (mm-Wave)
negative resistance
reflection amplifier
Resistance
return gain
Transmission line measurements
transmission line.
Voltage measurement

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10.1109/LMWC.2021.3125313

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title = "A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS",

abstract = "A reflection amplifier is designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band. Different from the conventional configurations, a proposed capacitive transmission line at the transistor source port results in negative input resistance and return gain. The return gain is further enhanced by adding an inductor at the drain port. The fabricated die occupies 0.38 mm² and consumes low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.",

keywords = "Gain, Gain measurement, Impedance, Logic gates, Millimeter-wave (mm-Wave), negative resistance, reflection amplifier, Resistance, return gain, Transmission line measurements, transmission line., Voltage measurement",

author = "Kuo, {Chien Nan} and Liu, {Yun Hao} and Gao, {Ruo Hsuan}",

note = "Publisher Copyright: IEEE",

year = "2021",

doi = "10.1109/LMWC.2021.3125313",

language = "English",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS

AU - Kuo, Chien Nan

AU - Liu, Yun Hao

AU - Gao, Ruo Hsuan

N1 - Publisher Copyright: IEEE

PY - 2021

Y1 - 2021

N2 - A reflection amplifier is designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band. Different from the conventional configurations, a proposed capacitive transmission line at the transistor source port results in negative input resistance and return gain. The return gain is further enhanced by adding an inductor at the drain port. The fabricated die occupies 0.38 mm² and consumes low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.

AB - A reflection amplifier is designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band. Different from the conventional configurations, a proposed capacitive transmission line at the transistor source port results in negative input resistance and return gain. The return gain is further enhanced by adding an inductor at the drain port. The fabricated die occupies 0.38 mm² and consumes low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.

KW - Gain

KW - Gain measurement

KW - Impedance

KW - Logic gates

KW - Millimeter-wave (mm-Wave)

KW - negative resistance

KW - reflection amplifier

KW - Resistance

KW - return gain

KW - Transmission line measurements

KW - transmission line.

KW - Voltage measurement

UR - http://www.scopus.com/inward/record.url?scp=85120048352&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2021.3125313

DO - 10.1109/LMWC.2021.3125313

M3 - Article

AN - SCOPUS:85120048352

SN - 1531-1309

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

ER -

A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS

Abstract

Keywords

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