A 53.36pF/MPA CMOS-MEMS Pressure Sensor with Compact Size and Integrated Digital Readout

Jyun Jie Yang, Gordon Tsai, Tsung Heng Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper reports a miniaturized high-sensitivity CMOS-MEMS pressure sensor. Square-shaped unit capacitors are proposed to enhance the density of the sensing area. High sensitivity is achieved by combining the interdigitated and the parallel architectures. Experimental results show that the sensitivity of 53.36pF/MPa is realized in the range of 0 - 40 kPa, and the die area of the proposed transducer is smaller by 29% compared to the conventional round-shaped transducers with the same sensitivity. The proposed transducer and digital readout circuits are fabricated on the same chip in UMC 0.18μm CMOS MEMS process.

Original languageEnglish
Title of host publication33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages661-664
Number of pages4
ISBN (Electronic)9781728135809
DOIs
StatePublished - Jan 2020
Event33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 - Vancouver, Canada
Duration: 18 Jan 202022 Jan 2020

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2020-January
ISSN (Print)1084-6999

Conference

Conference33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Country/TerritoryCanada
CityVancouver
Period18/01/2022/01/20

Keywords

  • Bypass SAR Capacitance-to-Digital Converter
  • Integrated Readout Circuits
  • Interdigitated Capacitive Sensor
  • MEMS

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