@inproceedings{74cdd8f88247428f896985df746e23e8,
title = "A 53.36pF/MPA CMOS-MEMS Pressure Sensor with Compact Size and Integrated Digital Readout",
abstract = "This paper reports a miniaturized high-sensitivity CMOS-MEMS pressure sensor. Square-shaped unit capacitors are proposed to enhance the density of the sensing area. High sensitivity is achieved by combining the interdigitated and the parallel architectures. Experimental results show that the sensitivity of 53.36pF/MPa is realized in the range of 0 - 40 kPa, and the die area of the proposed transducer is smaller by 29% compared to the conventional round-shaped transducers with the same sensitivity. The proposed transducer and digital readout circuits are fabricated on the same chip in UMC 0.18μm CMOS MEMS process.",
keywords = "Bypass SAR Capacitance-to-Digital Converter, Integrated Readout Circuits, Interdigitated Capacitive Sensor, MEMS",
author = "Yang, {Jyun Jie} and Gordon Tsai and Tsai, {Tsung Heng}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; null ; Conference date: 18-01-2020 Through 22-01-2020",
year = "2020",
month = jan,
doi = "10.1109/MEMS46641.2020.9056292",
language = "English",
series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "661--664",
booktitle = "33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020",
address = "United States",
}