A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

Ming Chun Hong; Yao Jen Chang; Yu Chen Hsin; Liang Ming Liu; Kuan Ming Chen; Yi Hui Su; Guan Long Chen; Shan Yi Yang; I. Jung Wang; Sk Ziaur Rahaman; Hsin Han Lee; Shih Ching Chiu; Chen Yi Shih; Chih Yao Wang; Fang Ming Chen; Jeng Hua Wei; Shyh Shyuan Sheu; Wei Chung Lo; Minn Tsong Lin; Chih I. Wu; Tuo Hung Hou

doi:10.1109/VLSITechnologyandCir46769.2022.9830503

A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

Ming Chun Hong, Yao Jen Chang, Yu Chen Hsin, Liang Ming Liu, Kuan Ming Chen, Yi Hui Su, Guan Long Chen, Shan Yi Yang, I. Jung Wang, Sk Ziaur Rahaman, Hsin Han Lee, Shih Ching Chiu, Chen Yi Shih, Chih Yao Wang, Fang Ming Chen, Jeng Hua Wei, Shyh Shyuan Sheu, Wei Chung Lo, Minn Tsong Lin, Chih I. WuTuo Hung Hou^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).

Original language	English
Title of host publication	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	379-380
Number of pages	2
ISBN (Electronic)	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830503
State	Published - 2022
Event	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States Duration: 12 Jun 2022 → 17 Jun 2022

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2022-June
ISSN (Print)	0743-1562

Conference

Conference	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/Territory	United States
City	Honolulu
Period	12/06/22 → 17/06/22

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10.1109/VLSITechnologyandCir46769.2022.9830503

Cite this

Hong, M. C., Chang, Y. J., Hsin, Y. C., Liu, L. M., Chen, K. M., Su, Y. H., Chen, G. L., Yang, S. Y., Wang, I. J., Rahaman, S. Z., Lee, H. H., Chiu, S. C., Shih, C. Y., Wang, C. Y., Chen, F. M., Wei, J. H., Sheu, S. S., Lo, W. C., Lin, M. T., ... Hou, T. H. (2022). A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (pp. 379-380). (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830503

Hong, Ming Chun ; Chang, Yao Jen ; Hsin, Yu Chen et al. / A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer. 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 379-380 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{1aab3ba820b74faeaab0b1cf07cd2d86,

title = "A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer",

abstract = "A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).",

author = "Hong, {Ming Chun} and Chang, {Yao Jen} and Hsin, {Yu Chen} and Liu, {Liang Ming} and Chen, {Kuan Ming} and Su, {Yi Hui} and Chen, {Guan Long} and Yang, {Shan Yi} and Wang, {I. Jung} and Rahaman, {Sk Ziaur} and Lee, {Hsin Han} and Chiu, {Shih Ching} and Shih, {Chen Yi} and Wang, {Chih Yao} and Chen, {Fang Ming} and Wei, {Jeng Hua} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Lin, {Minn Tsong} and Wu, {Chih I.} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

year = "2022",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830503",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "379--380",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",

address = "美國",

}

Hong, MC, Chang, YJ, Hsin, YC, Liu, LM, Chen, KM, Su, YH, Chen, GL, Yang, SY, Wang, IJ, Rahaman, SZ, Lee, HH, Chiu, SC, Shih, CY, Wang, CY, Chen, FM, Wei, JH, Sheu, SS, Lo, WC, Lin, MT, Wu, CI & Hou, TH 2022, A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer. in 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., pp. 379-380, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 12/06/22. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830503

A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer. / Hong, Ming Chun; Chang, Yao Jen; Hsin, Yu Chen et al.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 379-380 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

AU - Hong, Ming Chun

AU - Chang, Yao Jen

AU - Hsin, Yu Chen

AU - Liu, Liang Ming

AU - Chen, Kuan Ming

AU - Su, Yi Hui

AU - Chen, Guan Long

AU - Yang, Shan Yi

AU - Wang, I. Jung

AU - Rahaman, Sk Ziaur

AU - Lee, Hsin Han

AU - Chiu, Shih Ching

AU - Shih, Chen Yi

AU - Wang, Chih Yao

AU - Chen, Fang Ming

AU - Wei, Jeng Hua

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Lin, Minn Tsong

AU - Wu, Chih I.

AU - Hou, Tuo Hung

PY - 2022

Y1 - 2022

N2 - A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).

AB - A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).

UR - http://www.scopus.com/inward/record.url?scp=85135246985&partnerID=8YFLogxK

U2 - 10.1109/VLSITechnologyandCir46769.2022.9830503

DO - 10.1109/VLSITechnologyandCir46769.2022.9830503

M3 - Conference contribution

AN - SCOPUS:85135246985

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 379

EP - 380

BT - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

Y2 - 12 June 2022 through 17 June 2022

ER -

Hong MC, Chang YJ, Hsin YC, Liu LM, Chen KM, Su YH et al. A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 379-380. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830503

A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

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