A 4-7 GHz Broadband Cryogenic GaAs mHEMT LNA with a Flatness Gain Variation of ±1.2 dB

Che Hao Li*, Tzu Han Su, Chien Nan Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a cryogenic low noise amplifier (LNA) consisting of three common-source stages is designed in a 70-nm GaAs metamorphic high electron mobility transistor (mHEMT) process for quantum computer applications. By using a cryogenic HEMT model, this LNA operates at 4 K and features wide bandwidth and high gain. It applies a filter input matching network and a bandwidth extension topology in the input and interstage matching, respectively. Characterized over the frequency range of 4 to 7 GHz, the LNA demonstrates a high gain level of 28.6 ± 2 dB with power consumption of 7.2 mW. In the low-power mode, it still maintains a gain level of 21.3 ± 1.2 dB with power consumption of 1.9 mW.

Original languageEnglish
Title of host publicationISCAS 2024 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350330991
DOIs
StatePublished - 2024
Event2024 IEEE International Symposium on Circuits and Systems, ISCAS 2024 - Singapore, Singapore
Duration: 19 May 202422 May 2024

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2024 IEEE International Symposium on Circuits and Systems, ISCAS 2024
Country/TerritorySingapore
CitySingapore
Period19/05/2422/05/24

Keywords

  • GaAs
  • broadband
  • cryogenic low noise amplifier
  • mHEMT

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