A 270-GHz CMOS Triple-Push Ring Oscillator with a Coupled-Line Matching Network

Sooyeon Kim, Dae Keun Yoon, Jae Sung Rieh

    Research output: Contribution to journalArticlepeer-review

    3 Scopus citations

    Abstract

    A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm CMOS process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.

    Original languageEnglish
    Pages (from-to)449-462
    JournalIEEE Transactions on Terahertz Science and Technology
    Volume9
    Issue number5
    DOIs
    StatePublished - 1 Jan 2019

    Keywords

    • CMOS
    • CMOS technology
    • coupled lines
    • Harmonic analysis
    • harmonic generation
    • Impedance
    • Impedance matching
    • millimeter-wave
    • oscillators
    • Ring oscillators
    • ring oscillators
    • Steady-state
    • sub-millimeter wave
    • terahertz
    • triple-push

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