TY - GEN
T1 - A 2~3.6 GHz Reconfigurable Bandpass Filter Based on GaAs Technology
AU - Zhu, Bo Yuan
AU - Yang, Tao
AU - Chi, Pei Ling
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this paper, an on-chip reconfigurable filter based on GaAs process is designed. The filter is constructed by cascading low- and high-pass filters and employs the Butterworth prototype as the basic structure of the two filters. The combination of varactor and switching capacitor arrays composed of pHEMT transistors is used to realize a wide capacitance tuning range. Meanwhile, transmission zeros in the form of series resonances are introduced at the lower and upper stopband of the bandpass filter to improve selectivity and out-of-band rejection. One on-chip reconfigurable bandpass filter with continuously reconfigurable center frequency is designed and fabricated using the 0.15um GaAs pHEMT process. In this design, the wide tunable center frequency range covers 2~3.6GHz, the 1dB bandwidth is fixed at 800MHz, and the stopband rejection is greater than 28dB.
AB - In this paper, an on-chip reconfigurable filter based on GaAs process is designed. The filter is constructed by cascading low- and high-pass filters and employs the Butterworth prototype as the basic structure of the two filters. The combination of varactor and switching capacitor arrays composed of pHEMT transistors is used to realize a wide capacitance tuning range. Meanwhile, transmission zeros in the form of series resonances are introduced at the lower and upper stopband of the bandpass filter to improve selectivity and out-of-band rejection. One on-chip reconfigurable bandpass filter with continuously reconfigurable center frequency is designed and fabricated using the 0.15um GaAs pHEMT process. In this design, the wide tunable center frequency range covers 2~3.6GHz, the 1dB bandwidth is fixed at 800MHz, and the stopband rejection is greater than 28dB.
KW - Bandpass filter
KW - frequency reconfiguration
KW - wide frequency adjustment range
UR - http://www.scopus.com/inward/record.url?scp=85182724665&partnerID=8YFLogxK
U2 - 10.1109/ISEMC58300.2023.10370393
DO - 10.1109/ISEMC58300.2023.10370393
M3 - Conference contribution
AN - SCOPUS:85182724665
T3 - IEEE International Symposium on Electromagnetic Compatibility
BT - 7th International Symposium on Electromagnetic Compatibility, ISEMC 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE International Symposium on Electromagnetic Compatibility, ISEMC 2023
Y2 - 20 October 2023 through 23 October 2023
ER -