@inproceedings{9ccede8d74ad4adf87a195cc1cd5565d,
title = "A 2-18 GHz 8-W Distributed GaN Power Amplifier Based on Input and Output Matching Network",
abstract = "A high efficiency non-uniform distributed power amplifier (NDPA) based on a 0.15 μm Gallium Nitride (GaN) HEMT process is proposed. The amplifier contains eight amplification cells and uses artificial transmission line theory to design the drain transmission line with decreasing characteristic impedance. To improve the efficiency of the amplifier, the amplifier is class AB biased and designed for optimum impedance matching using the matching networks. The electromagnetic simulation results of the designed amplifier show that the small signal gain of the amplifier is more than 12.6 dB and the saturated output power (Psat) is more than 39.1 dBm with power-added efficiency (PAE) of larger than 28.5\% in the frequency range of 2-18 GHz. The core area of the chip is 3.0×1.8",
keywords = "Gallium Nitride, MMIC, Non-uniform distributed power amplifier, Wideband power amplifier",
author = "Ziqi Pu and Xu Zhu and Liang Qi and Yong Wang and Chi, \{Pei Ling\} and Tao Yang",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 ; Conference date: 14-05-2023 Through 17-05-2023",
year = "2023",
doi = "10.1109/ICMMT58241.2023.10276530",
language = "English",
series = "2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings",
address = "美國",
}