Abstract
This article presents a nanowatt CMOS voltage reference using self-biased and capacitively coupled schemes for improving the power supply rejection ratio (PSRR) and settling time without power-intensive auxiliary amplifiers and bias circuits. The chip was fabricated in a 0.18- $\mu \text{m}$ CMOS process. With the proposed schemes, the design can achieve a 1% settling time of 0.2 ms and a -73.5-dB PSRR at 100 Hz while only consuming 1.8 nW. The average temperature coefficient of 15 chips is 62 ppm/°C in a temperature range from -40 °C to 130 °C. The average voltage at 20 °C is 0.26 V, while the standard deviation is 1.1 mV and $3~\sigma $ accuracy is 0.43%.
Original language | English |
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Article number | 9233942 |
Pages (from-to) | 1795-1804 |
Number of pages | 10 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 56 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2021 |
Keywords
- CMOS voltage reference (VR)
- low power
- power supply rejection ratio (PSRR)
- startup time