A 1.75GHz inductor-less CMOS low noise amplifier with high-Q active inductor load

Jhy Neng Yang*, Yi Chang Cheng, Terng-Yin Hsu, Terng Ren Hsu, Chen-Yi Lee

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

5 Scopus citations

Abstract

A 1.75GHz CMOS inductor-less low noise amplifier with high-Q active inductor load using 0.35um standard CMOS digital process is presented. In this low noise amplifier, the compact tunable high-Q active inductor load is connected to the common-gate configuration to improve the performance of the high power gain, low power consumption and simple matching characteristics. Not using any passive components is to reduce the area of chip and the complexity. HSPICE simulation has been performed to verify the performance of the designed low noise amplifier. It has been shown that the amplifier has a power gain of 24dB(S21), S11 of -31dB, S12 of -38.5dB and S22 of -21.4dB under 3.3V power supply with 9.3mW power consumption around at 1.75GHz center frequency. The experimental chip fabricated occupies 0.057×0.056 mm2 chip area.

Original languageEnglish
Pages816-819
Number of pages4
StatePublished - 1 Dec 2001
Event2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001) - Dayton, OH, United States
Duration: 14 Aug 200117 Aug 2001

Conference

Conference2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001)
Country/TerritoryUnited States
CityDayton, OH
Period14/08/0117/08/01

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