A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application

Chia Lung Hung; Yi Kai Hsiao; Hao Chung Kuo

doi:10.1109/WiPDAAsia58218.2023.10261901

A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application

Chia Lung Hung^*, Yi Kai Hsiao, Hao Chung Kuo

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Simulation of a 1700 V 4H-SiC VDMOSFET with self-aligned channel and split gate (SASG) architecture for high frequency switching performance is reported. An innovative process flow to fabricate the 1700 V SASG VDMOSFET is proposed at first time and the DC and AC characteristics of the proposed SASG VDMOSFET are compared with conventional VDMOSFET through TCAD (Technology Computer Aided Design) simulation. The gate charge, switching delay time and input capacitance have been improved 32%, 45% and 28% on the SASG VDMOSFET, respectively without sacrificing DC characteristics.

Original language	English
Title of host publication	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350337112
DOIs	https://doi.org/10.1109/WiPDAAsia58218.2023.10261901
State	Published - 2023
Event	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan Duration: 27 Aug 2023 → 29 Aug 2023

Publication series

Name	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
Country/Territory	Taiwan
City	Hsinchu
Period	27/08/23 → 29/08/23

Keywords

Self-aligned channel
Silicon Carbide
Split gate
VDMOSFET

Access to Document

10.1109/WiPDAAsia58218.2023.10261901

Cite this

Hung, C. L., Hsiao, Y. K., & Kuo, H. C. (2023). A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application. In WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia58218.2023.10261901

Hung, Chia Lung ; Hsiao, Yi Kai ; Kuo, Hao Chung. / A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

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title = "A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application",

abstract = "Simulation of a 1700 V 4H-SiC VDMOSFET with self-aligned channel and split gate (SASG) architecture for high frequency switching performance is reported. An innovative process flow to fabricate the 1700 V SASG VDMOSFET is proposed at first time and the DC and AC characteristics of the proposed SASG VDMOSFET are compared with conventional VDMOSFET through TCAD (Technology Computer Aided Design) simulation. The gate charge, switching delay time and input capacitance have been improved 32%, 45% and 28% on the SASG VDMOSFET, respectively without sacrificing DC characteristics.",

keywords = "Self-aligned channel, Silicon Carbide, Split gate, VDMOSFET",

author = "Hung, {Chia Lung} and Hsiao, {Yi Kai} and Kuo, {Hao Chung}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",

year = "2023",

doi = "10.1109/WiPDAAsia58218.2023.10261901",

language = "English",

series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "美國",

}

Hung, CL, Hsiao, YK & Kuo, HC 2023, A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application. in WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023, Hsinchu, Taiwan, 27/08/23. https://doi.org/10.1109/WiPDAAsia58218.2023.10261901

A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application. / Hung, Chia Lung; Hsiao, Yi Kai; Kuo, Hao Chung.
WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hung, Chia Lung

AU - Hsiao, Yi Kai

AU - Kuo, Hao Chung

PY - 2023

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N2 - Simulation of a 1700 V 4H-SiC VDMOSFET with self-aligned channel and split gate (SASG) architecture for high frequency switching performance is reported. An innovative process flow to fabricate the 1700 V SASG VDMOSFET is proposed at first time and the DC and AC characteristics of the proposed SASG VDMOSFET are compared with conventional VDMOSFET through TCAD (Technology Computer Aided Design) simulation. The gate charge, switching delay time and input capacitance have been improved 32%, 45% and 28% on the SASG VDMOSFET, respectively without sacrificing DC characteristics.

AB - Simulation of a 1700 V 4H-SiC VDMOSFET with self-aligned channel and split gate (SASG) architecture for high frequency switching performance is reported. An innovative process flow to fabricate the 1700 V SASG VDMOSFET is proposed at first time and the DC and AC characteristics of the proposed SASG VDMOSFET are compared with conventional VDMOSFET through TCAD (Technology Computer Aided Design) simulation. The gate charge, switching delay time and input capacitance have been improved 32%, 45% and 28% on the SASG VDMOSFET, respectively without sacrificing DC characteristics.

KW - Self-aligned channel

KW - Silicon Carbide

KW - Split gate

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BT - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

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Hung CL, Hsiao YK, Kuo HC. A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application. In WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia58218.2023.10261901

A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application

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