@inproceedings{fd64d5b6234245fe8841e5af62697d79,
title = "A 15.4ppm/°C GaN-based Voltage Reference with Process-Variation-Immunity and High PSR for EV Power Systems",
abstract = "The proposed GaN-based voltage reference (VREF) generator (VRG) has a low temperature coefficient (TC) of 15.4ppm/°C, a small deviation of VREF at different process corners with a standard deviation of 0.22%, a great line sensitivity of 0.0023%/V, and a great power-supply rejection (PSR) of -187dB and -114dB at 100Hz and 50MHz, respectively. The proportional-to-absolute-temperature (PTAT) IG of enhancement-mode GaN (eGaN) can optimize TC. Eliminating the IG of depletion-mode GaN (dGaN) and using multiple stacked composite dGaN can improve line regulation and PSR. All performance is achieved with a low power consumption of 10.9μ W.",
author = "Chiu, {Po Jui} and Wang, {Tz Wun} and Chen, {Chi Yu} and Hung, {Sheng Hsi} and Huang, {Yu Ting} and Wu, {Xiao Quan} and Chen, {Ke Horng} and Zheng, {Kuo Lin} and Li, {Chih Chen}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631514",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
address = "美國",
}