A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology

Teng Yi Wang; Wei-Zen Chen; Chia-Ming Tsai; Li Ren Huang; Day Uei Li

doi:10.1109/VDAT.2005.1500068

A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology

Teng Yi Wang^*
, Wei-Zen Chen
, Chia-Ming Tsai
, Li Ren Huang
, Day Uei Li

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35μm SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps_p-p. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 × 940 μm ².

Original language	English
Title of host publication	2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Pages	253-256
Number of pages	4
DOIs	https://doi.org/10.1109/VDAT.2005.1500068
State	Published - 1 Dec 2005
Event	2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT) - Hsinchu, Taiwan Duration: 27 Apr 2005 → 29 Apr 2005

Publication series

Name	2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Volume	2005

Conference

Conference	2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Country/Territory	Taiwan
City	Hsinchu
Period	27/04/05 → 29/04/05

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10.1109/VDAT.2005.1500068

Cite this

Wang, T. Y., Chen, W.-Z., Tsai, C.-M., Huang, L. R., & Li, D. U. (2005). A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology. In 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT) (pp. 253-256). Article 1500068 (2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT); Vol. 2005). https://doi.org/10.1109/VDAT.2005.1500068

@inproceedings{ff37c38a0fcc4918bed6cbe847ed60d7,

title = "A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology",

abstract = "This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35μm SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2psp-p. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 × 940 μm 2.",

author = "Wang, \{Teng Yi\} and Wei-Zen Chen and Chia-Ming Tsai and Huang, \{Li Ren\} and Li, \{Day Uei\}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/VDAT.2005.1500068",

language = "English",

isbn = "0780390601",

series = "2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)",

pages = "253--256",

booktitle = "2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)",

note = "2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT) ; Conference date: 27-04-2005 Through 29-04-2005",

}

Wang, TY, Chen, W-Z , Tsai, C-M, Huang, LR & Li, DU 2005, A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology. in 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)., 1500068, 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT), vol. 2005, pp. 253-256, 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT), Hsinchu, Taiwan, 27/04/05. https://doi.org/10.1109/VDAT.2005.1500068

A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology. / Wang, Teng Yi; Chen, Wei-Zen ; Tsai, Chia-Ming et al.
2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT). 2005. p. 253-256 1500068 (2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT); Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Wang, Teng Yi

AU - Chen, Wei-Zen

AU - Tsai, Chia-Ming

AU - Huang, Li Ren

AU - Li, Day Uei

PY - 2005/12/1

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N2 - This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35μm SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2psp-p. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 × 940 μm 2.

AB - This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35μm SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2psp-p. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 × 940 μm 2.

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BT - 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)

T2 - 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)

Y2 - 27 April 2005 through 29 April 2005

ER -

A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology

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