A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao; Wu Wei Tsai; Chun Yu Chen; Hsiao-Wen Zan; Hsin-Fei Meng

doi:10.1109/IEDM.2009.5424347

A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao^*, Wu Wei Tsai, Chun Yu Chen, Hsiao-Wen Zan, Hsin-Fei Meng

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×10⁴ is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	15.2.1-15.2.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424347
State	Published - 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	7/12/09 → 9/12/09

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10.1109/IEDM.2009.5424347

Cite this

Chao, Y. C., Tsai, W. W., Chen, C. Y., Zan, H.-W., & Meng, H.-F. (2009). A 1-V operated polymer vertical transistor with high on/off current ratio. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 15.2.1-15.2.4). Article 5424347 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424347

@inproceedings{351b4215f63e443da53ece3714ffc70e,

title = "A 1-V operated polymer vertical transistor with high on/off current ratio",

abstract = "A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.",

author = "Chao, {Yu Chiang} and Tsai, {Wu Wei} and Chen, {Chun Yu} and Hsiao-Wen Zan and Hsin-Fei Meng",

year = "2009",

doi = "10.1109/IEDM.2009.5424347",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "15.2.1--15.2.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

}

Chao, YC, Tsai, WW, Chen, CY, Zan, H-W & Meng, H-F 2009, A 1-V operated polymer vertical transistor with high on/off current ratio. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424347, Technical Digest - International Electron Devices Meeting, IEDM, pp. 15.2.1-15.2.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424347

A 1-V operated polymer vertical transistor with high on/off current ratio. / Chao, Yu Chiang; Tsai, Wu Wei; Chen, Chun Yu et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 15.2.1-15.2.4 5424347 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 1-V operated polymer vertical transistor with high on/off current ratio

AU - Chao, Yu Chiang

AU - Tsai, Wu Wei

AU - Chen, Chun Yu

AU - Zan, Hsiao-Wen

AU - Meng, Hsin-Fei

PY - 2009

Y1 - 2009

N2 - A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

AB - A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

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DO - 10.1109/IEDM.2009.5424347

M3 - Conference contribution

AN - SCOPUS:77952333908

SN - 9781424456406

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.2.1-15.2.4

BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

A 1-V operated polymer vertical transistor with high on/off current ratio

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