A 1-V, Low-Power CMOS LNA for Ultra-wideband Receivers

Po Yang Chang; Hui I. Wu; Christina Jou

doi:10.1109/APMC.2007.4554961

A 1-V, Low-Power CMOS LNA for Ultra-wideband Receivers

Po Yang Chang, Hui I. Wu, Christina Jou

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

A 1-V, low-power ultra-wideband (UWB) low-noise amplifier (LNA) for IEEE 802.153a is implemented in TSMC 0.18-mu m. mixed signal/RF CMOS process. With only 1V bias voltage, the LNA can achieve a measured flat power gain (S21) of 10dB from 2.5 to 8.5 GHz while consuming only 7.25 mW. The minimum noise figure is 3.46dB. A simplified Chebyshev filter is used to achieve an input broadband matching of a measured S11 < -7.1dB from 3.1 to 10.6 GHz. An output-matching buffer is designed specially to match for high gain at upper frequency, the measured S22 is <-12.5dB from 3.1 GHz to 10.6 GHz. Furthermore, the high frequency electromagnetic effect of the transmission lines is considered in this circuit.

Original language	American English
Pages	1718-1721
Number of pages	4
DOIs	https://doi.org/10.1109/APMC.2007.4554961
State	Published - 11 Dec 2007
Event	Asia-Pacific Microwave Conference, APMC 2007 - Bangkok, Thailand Duration: 11 Dec 2007 → 14 Dec 2007

Conference

Conference	Asia-Pacific Microwave Conference, APMC 2007
Country/Territory	Thailand
City	Bangkok
Period	11/12/07 → 14/12/07

Keywords

LNA
CMOS
Ultra wide-band

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10.1109/APMC.2007.4554961

Cite this

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title = "A 1-V, Low-Power CMOS LNA for Ultra-wideband Receivers",

abstract = "A 1-V, low-power ultra-wideband (UWB) low-noise amplifier (LNA) for IEEE 802.153a is implemented in TSMC 0.18-mu m. mixed signal/RF CMOS process. With only 1V bias voltage, the LNA can achieve a measured flat power gain (S21) of 10dB from 2.5 to 8.5 GHz while consuming only 7.25 mW. The minimum noise figure is 3.46dB. A simplified Chebyshev filter is used to achieve an input broadband matching of a measured S11 < -7.1dB from 3.1 to 10.6 GHz. An output-matching buffer is designed specially to match for high gain at upper frequency, the measured S22 is <-12.5dB from 3.1 GHz to 10.6 GHz. Furthermore, the high frequency electromagnetic effect of the transmission lines is considered in this circuit.",

keywords = "LNA, CMOS, Ultra wide-band",

author = "Chang, {Po Yang} and Wu, {Hui I.} and Christina Jou",

year = "2007",

month = dec,

day = "11",

doi = "10.1109/APMC.2007.4554961",

language = "American English",

pages = "1718--1721",

note = "Asia-Pacific Microwave Conference, APMC 2007 ; Conference date: 11-12-2007 Through 14-12-2007",

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T1 - A 1-V, Low-Power CMOS LNA for Ultra-wideband Receivers

AU - Chang, Po Yang

AU - Wu, Hui I.

AU - Jou, Christina

PY - 2007/12/11

Y1 - 2007/12/11

N2 - A 1-V, low-power ultra-wideband (UWB) low-noise amplifier (LNA) for IEEE 802.153a is implemented in TSMC 0.18-mu m. mixed signal/RF CMOS process. With only 1V bias voltage, the LNA can achieve a measured flat power gain (S21) of 10dB from 2.5 to 8.5 GHz while consuming only 7.25 mW. The minimum noise figure is 3.46dB. A simplified Chebyshev filter is used to achieve an input broadband matching of a measured S11 < -7.1dB from 3.1 to 10.6 GHz. An output-matching buffer is designed specially to match for high gain at upper frequency, the measured S22 is <-12.5dB from 3.1 GHz to 10.6 GHz. Furthermore, the high frequency electromagnetic effect of the transmission lines is considered in this circuit.

AB - A 1-V, low-power ultra-wideband (UWB) low-noise amplifier (LNA) for IEEE 802.153a is implemented in TSMC 0.18-mu m. mixed signal/RF CMOS process. With only 1V bias voltage, the LNA can achieve a measured flat power gain (S21) of 10dB from 2.5 to 8.5 GHz while consuming only 7.25 mW. The minimum noise figure is 3.46dB. A simplified Chebyshev filter is used to achieve an input broadband matching of a measured S11 < -7.1dB from 3.1 to 10.6 GHz. An output-matching buffer is designed specially to match for high gain at upper frequency, the measured S22 is <-12.5dB from 3.1 GHz to 10.6 GHz. Furthermore, the high frequency electromagnetic effect of the transmission lines is considered in this circuit.

KW - LNA

KW - CMOS

KW - Ultra wide-band

U2 - 10.1109/APMC.2007.4554961

DO - 10.1109/APMC.2007.4554961

M3 - Paper

SP - 1718

EP - 1721

T2 - Asia-Pacific Microwave Conference, APMC 2007

Y2 - 11 December 2007 through 14 December 2007

ER -

A 1-V, Low-Power CMOS LNA for Ultra-wideband Receivers

Abstract

Conference

Keywords

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