A 0.75 VCMOS low-noise amplifier for ultra wide-band wireless receiver

Hui I. Wu; Zi-Hao Hsiung; Christina Jou

doi:10.2529/PIERS060907041726

A 0.75 VCMOS low-noise amplifier for ultra wide-band wireless receiver

Hui I. Wu, Zi-Hao Hsiung, Christina Jou

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.

Original language	American English
Pages	152-+
DOIs	https://doi.org/10.2529/PIERS060907041726
State	Published - 2007
Event	Progress in Electromagnetics Research Symposium (PIERS 2007) - Beijing, China Duration: 26 Mar 2007 → 30 Mar 2007

Conference

Conference	Progress in Electromagnetics Research Symposium (PIERS 2007)
Country/Territory	China
City	Beijing
Period	26/03/07 → 30/03/07

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10.2529/PIERS060907041726

Cite this

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abstract = "An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.",

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doi = "10.2529/PIERS060907041726",

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AU - Hsiung, Zi-Hao

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N2 - An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.

AB - An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.

U2 - 10.2529/PIERS060907041726

DO - 10.2529/PIERS060907041726

M3 - Paper

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T2 - Progress in Electromagnetics Research Symposium (PIERS 2007)

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ER -

A 0.75 VCMOS low-noise amplifier for ultra wide-band wireless receiver

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