A 0.6-V VDD W-Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

Chia Jen Liang, Ching Wen Chiang, Jia Zhou, Rulin Huang, Kuei-Ann Wen, Mau Chung Frank Chang, Yen Cheng Kuan

    Research output: Contribution to journalArticlepeer-review

    Abstract

    This letter presents a W-band low-power and high-gain differential low noise amplifier (LNA) fabricated in 28-nm bulk CMOS technology. This LNA operates at a 0.6-V supply voltage (VDD) to achieve low power consumption and respond to the low-voltage regime anticipated in future CMOS technology nodes. To obtain sufficient voltage headroom and mitigate the Miller effect, this LNA employs neutralized common source (CS) instead of cascode topology in each stage. The common-mode instability introduced by CS neutralization is reduced by making the secondary coil of each transformer (except the final one) center-tapped with resistors. The stability factor (K) and measure (B1) at a single-stage common mode are improved from 0.59 to 126 and from -0.14 to 0.6, respectively. In addition, each stage of this LNA uses only one transformer for conjugate matching, without any capacitor to minimize the passive loss. This LNA consists of five stages and achieves a power gain of 25 dB over 81-91 GHz (BW3dB) and a minimum noise figure (NF) of 6 dB at 85 GHz with power consumption of 15 mW and a silicon core area of 0.19 mm2.

    Original languageEnglish
    JournalIEEE Microwave and Wireless Components Letters
    DOIs
    StateAccepted/In press - 2021

    Keywords

    • 28-nm bulk CMOS
    • CMOS technology
    • differential low noise amplifier (LNA)
    • low power
    • low supply voltage
    • Low VDD
    • Microwave amplifiers
    • millimeter-wave (mmWave)
    • neutralized common-source
    • Noise measurement
    • Semiconductor device measurement
    • Stability analysis
    • Topology
    • W-band
    • Wireless communication

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