A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM with Vtrip-Tracking Write-Assist

Keyphrases

• 6T-SRAM 100%
• Bitline 100%
• Write Assist 100%
• Array-based 100%
• Low-swing 100%
• Mini-array 100%
• Cell Array 66%
• Sleep Mode 33%
• CMOS Technology 33%
• Metal Gate 33%
• Inverter 33%
• Writing Ability 33%
• Operation Frequency 33%
• Ultrashort 33%
• Wake-up 33%
• Large Signal 33%
• Error-free 33%
• Data Retention 33%
• Dynamic Power 33%
• Redundancy 33%
• Power Gating 33%
• Foundry 33%
• Signal Sensing 33%
• Variation Tolerance 33%
• Static Random Access Memory 33%
• Manufacturability 33%
• Threshold Power 33%
• Read Power 33%
• Voltage Power 33%
• Reading Performance 33%
• Tracking Capability 33%
• Swing Voltage 33%
• Macro-areas 33%
• Near-threshold Regime 33%
• Pre-charger 33%

Engineering

• Bit Line 100%
• Cell Array 66%
• Metal Gate 33%
• Frequency Operation 33%
• Fits and Tolerances 33%
• Sleep Mode 33%
• Data Retention 33%
• Random Access Memory 33%
• Manufacturability 33%
• Inverter 33%