A 0.325 V, 600-kHz, 40-nm 72-kb 9T subthreshold SRAM with aligned boosted write wordline and negative write bitline write-assist

Chien Yu Lu, Ching Te Chuang, Shyh-Jye Jou, Ming Hsien Tu, Ya Ping Wu, Chung Ping Huang, Paul Sen Kan, Huan Shun Huang, Kuen Di Lee, Yung Shin Kao

Research output: Contribution to journal › Article › peer-review

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