This paper presents a high performance RFCMOS technology with a complete portfolio of RF and base band components for single-chip systems. Using optimized CMOS topology and deep n-well, we obtain a Ft of 60GHz and Fmax of 55GHz at 10mA, a Ft of 70GHz and Fmax of 58GHz at maximum-transconductance bias, and a minimum noise figure of 1.5dB without ground-shielded signal pad. High quality-factor inductors are obtained using Copper interconnect giving a quality factor of 18 at 1.7nH. MIM capacitors, as well as accumulation and junction varactors are also optimized for enhancing quality factor. For the purpose of eliminating inter-block coupling noise penetrating through substrate, a deep n-well isolation and p-ring have been adopted to suppress the substrate noise by 25dB and 10dB respectively. This technology provides a complete solution for single-chip wireless systems.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 2001|
|Event||International Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States|
Duration: 20 May 2001 → 25 May 2001