A 0.18μm foundry RF CMOS technology with 70GHz FT for single chip system solutions

Heng Ming Hsu, Jui Yu Chang, Jiong Guang Su*, Chao Chieh Tsai, Shyh Chyi Wong, C. W. Chen, K. R. Peng, S. P. Ma, C. H. Chen, T. H. Yeh, C. H. Lin, Y. C. Sun, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

51 Scopus citations

Abstract

This paper presents a high performance RFCMOS technology with a complete portfolio of RF and base band components for single-chip systems. Using optimized CMOS topology and deep n-well, we obtain a Ft of 60GHz and Fmax of 55GHz at 10mA, a Ft of 70GHz and Fmax of 58GHz at maximum-transconductance bias, and a minimum noise figure of 1.5dB without ground-shielded signal pad. High quality-factor inductors are obtained using Copper interconnect giving a quality factor of 18 at 1.7nH. MIM capacitors, as well as accumulation and junction varactors are also optimized for enhancing quality factor. For the purpose of eliminating inter-block coupling noise penetrating through substrate, a deep n-well isolation and p-ring have been adopted to suppress the substrate noise by 25dB and 10dB respectively. This technology provides a complete solution for single-chip wireless systems.

Original languageEnglish
Pages (from-to)1869-1872
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
DOIs
StatePublished - 2001
EventInternational Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States
Duration: 20 May 200125 May 2001

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