A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

Rui Jun Ng; Sheng Cheng Lee; Ching Tao Hsu; Yi Chun Liao; Ke Horng Chen; Kuo Lin Zheng; Ying Hsi Lin; Shian Ru Lin; Tsung Yen Tsai

doi:10.1109/ESSERC62670.2024.10719493

A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

Rui Jun Ng^*, Sheng Cheng Lee, Ching Tao Hsu, Yi Chun Liao, Ke Horng Chen, Kuo Lin Zheng, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper proposes a 50W Class D audio amplifier GaN power stage. Due to the reduction of reverse conduction and hard switching losses in the GaN power stage, the proposed antireverse (AR) technique achieves a peak efficiency of 9 4%, higher than comparable technologies for MOSFET power switches. In addition, due to the low parasitic capacitance and low onresistance of GaN power switches, the operating frequency can be increased to high switching frequencies. Additionally, the proposed high frequency residual cancellation (HFRC) technique can reduce the THD+N to approximately 0.00043% at 1kHz input.

Original language	English
Title of host publication	ESSERC 2024 - Proceedings
Subtitle of host publication	50th IEEE European Solid-State Electronics Research Conference
Publisher	IEEE Computer Society
Pages	65-68
Number of pages	4
ISBN (Electronic)	9798350388138
DOIs	https://doi.org/10.1109/ESSERC62670.2024.10719493
State	Published - 2024
Event	50th IEEE European Solid-State Electronics Research Conference, ESSERC 2024 - Bruges, Belgium Duration: 9 Sep 2024 → 12 Sep 2024

Publication series

Name	European Solid-State Circuits Conference
ISSN (Print)	1930-8833

Conference

Conference	50th IEEE European Solid-State Electronics Research Conference, ESSERC 2024
Country/Territory	Belgium
City	Bruges
Period	9/09/24 → 12/09/24

Keywords

anti-reverse technique
class-D amplifiers
GaN power stage
high-frequency residual cancellation

Access to Document

10.1109/ESSERC62670.2024.10719493

Cite this

Ng, R. J., Lee, S. C., Hsu, C. T., Liao, Y. C., Chen, K. H., Zheng, K. L., Lin, Y. H., Lin, S. R., & Tsai, T. Y. (2024). A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques. In ESSERC 2024 - Proceedings: 50th IEEE European Solid-State Electronics Research Conference (pp. 65-68). (European Solid-State Circuits Conference). IEEE Computer Society. https://doi.org/10.1109/ESSERC62670.2024.10719493

@inproceedings{95fe344705ff480fa03daf72e372f67e,

title = "A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques",

abstract = "This paper proposes a 50W Class D audio amplifier GaN power stage. Due to the reduction of reverse conduction and hard switching losses in the GaN power stage, the proposed antireverse (AR) technique achieves a peak efficiency of 9 4%, higher than comparable technologies for MOSFET power switches. In addition, due to the low parasitic capacitance and low onresistance of GaN power switches, the operating frequency can be increased to high switching frequencies. Additionally, the proposed high frequency residual cancellation (HFRC) technique can reduce the THD+N to approximately 0.00043% at 1kHz input.",

keywords = "anti-reverse technique, class-D amplifiers, GaN power stage, high-frequency residual cancellation",

author = "Ng, {Rui Jun} and Lee, {Sheng Cheng} and Hsu, {Ching Tao} and Liao, {Yi Chun} and Chen, {Ke Horng} and Zheng, {Kuo Lin} and Lin, {Ying Hsi} and Lin, {Shian Ru} and Tsai, {Tsung Yen}",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 50th IEEE European Solid-State Electronics Research Conference, ESSERC 2024 ; Conference date: 09-09-2024 Through 12-09-2024",

year = "2024",

doi = "10.1109/ESSERC62670.2024.10719493",

language = "English",

series = "European Solid-State Circuits Conference",

publisher = "IEEE Computer Society",

pages = "65--68",

booktitle = "ESSERC 2024 - Proceedings",

address = "美國",

}

Ng, RJ, Lee, SC, Hsu, CT, Liao, YC, Chen, KH, Zheng, KL, Lin, YH, Lin, SR & Tsai, TY 2024, A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques. in ESSERC 2024 - Proceedings: 50th IEEE European Solid-State Electronics Research Conference. European Solid-State Circuits Conference, IEEE Computer Society, pp. 65-68, 50th IEEE European Solid-State Electronics Research Conference, ESSERC 2024, Bruges, Belgium, 9/09/24. https://doi.org/10.1109/ESSERC62670.2024.10719493

A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques. / Ng, Rui Jun; Lee, Sheng Cheng; Hsu, Ching Tao et al.
ESSERC 2024 - Proceedings: 50th IEEE European Solid-State Electronics Research Conference. IEEE Computer Society, 2024. p. 65-68 (European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ng, Rui Jun

AU - Lee, Sheng Cheng

AU - Hsu, Ching Tao

AU - Liao, Yi Chun

AU - Chen, Ke Horng

AU - Zheng, Kuo Lin

AU - Lin, Ying Hsi

AU - Lin, Shian Ru

AU - Tsai, Tsung Yen

PY - 2024

Y1 - 2024

N2 - This paper proposes a 50W Class D audio amplifier GaN power stage. Due to the reduction of reverse conduction and hard switching losses in the GaN power stage, the proposed antireverse (AR) technique achieves a peak efficiency of 9 4%, higher than comparable technologies for MOSFET power switches. In addition, due to the low parasitic capacitance and low onresistance of GaN power switches, the operating frequency can be increased to high switching frequencies. Additionally, the proposed high frequency residual cancellation (HFRC) technique can reduce the THD+N to approximately 0.00043% at 1kHz input.

AB - This paper proposes a 50W Class D audio amplifier GaN power stage. Due to the reduction of reverse conduction and hard switching losses in the GaN power stage, the proposed antireverse (AR) technique achieves a peak efficiency of 9 4%, higher than comparable technologies for MOSFET power switches. In addition, due to the low parasitic capacitance and low onresistance of GaN power switches, the operating frequency can be increased to high switching frequencies. Additionally, the proposed high frequency residual cancellation (HFRC) technique can reduce the THD+N to approximately 0.00043% at 1kHz input.

KW - anti-reverse technique

KW - class-D amplifiers

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KW - high-frequency residual cancellation

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M3 - Conference contribution

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T3 - European Solid-State Circuits Conference

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PB - IEEE Computer Society

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Ng RJ, Lee SC, Hsu CT, Liao YC, Chen KH, Zheng KL et al. A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques. In ESSERC 2024 - Proceedings: 50th IEEE European Solid-State Electronics Research Conference. IEEE Computer Society. 2024. p. 65-68. (European Solid-State Circuits Conference). doi: 10.1109/ESSERC62670.2024.10719493

A 0.00043% THD+N 50W Class D Audio Amplifier GaN-Power Stage with High Frequency Residual Cancellation and Anti-Reverse Techniques

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Keywords

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