62.8GHz fmax LP-CVD epitaxially grown silicon base bipolar transistor with extremely high early voltage of 85.7V

C. Yoshino*, K. Inou, S. Matsuda, H. Nakajima, Y. Tsuboi, H. Naruse, H. Sugaya, Y. Katsumata, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

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Engineering & Materials Science