@inproceedings{278b177cd069410189c2d513c951b7b2,
title = "62.3: A novel nanostructure enhanced Pi-cell for transition-rate improvement",
abstract = "It is well known that a Pi-cell must be operated in bend state transited from splay state. Before starting state transition, the nucleation must be happened uniformly to whole active area in a Pi-cell. In this study, Nanostructure Enhanced Pi-cell (NE-Pi-cell) was proposed. Not only the random distribution of silicon oxide nano-particles was investigated for decreasing the transition time, but also the limitation of increasing nano-particle density was also studied well. The reduction rates of splay-to-bend and twist-to-splay transition time were over 99.9% with nanostructure surfaces. However, the response time and V-T curve remained the same as un-treated Pi-cell.",
author = "Chen, {Szu Fen F.} and Chang, {Yu Yun} and Huang-Ming Chen and Shieh, {Han Ping D.}",
year = "2010",
month = dec,
day = "1",
doi = "10.1889/1.3500634",
language = "English",
isbn = "9781618390950",
series = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",
pages = "932--934",
booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",
note = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 ; Conference date: 23-05-2010 Through 28-05-2010",
}