60-GHz SiGe BiCMOS dual-conversion down-converter: Schottky diode RF mixer and analog Gilbert IF mixer with microwave quadrature generator

Jen Chieh Kao*, Chin-Chun Meng, Hung Ju Wei, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A 60 GHz dual-conversion down-converter using 0.35 μm SiGe BiCMOS process is demonstrated in this paper. A Schottky diode ring mixer with wideband Marchand balun works as the 60-GHz RF mixer while two analog Gilbert micromixers with LO port pumped by two quadrature couplers work as IF mixers. The cut-off frequency of a Schottky diode makes a fundamental RF ring mixer possible because the series resistance of a Schottky diode is effectively reduced by the n+ buried layer in SiGe BiCMOS process. A Gilbert micromixer with an IF buffer is used to accommodate the single-ended output of the RF ring mixer. By combining these advantages, a dual-conversion down-converter is achieved. The converter has about 8 dB conversion gain, 10 GHz RF bandwidth of 50-60 GHz, 100 MHz IF bandwidth when LO1 power is 8 dBm and LO2 power is 2 dBm.

Original languageEnglish
Title of host publicationSiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages54-56
Number of pages3
ISBN (Electronic)9781509016877
DOIs
StatePublished - 31 Mar 2016
Event16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 - Austin, United States
Duration: 24 Jan 201627 Jan 2016

Publication series

NameSiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Conference

Conference16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016
Country/TerritoryUnited States
CityAustin
Period24/01/1627/01/16

Keywords

  • Dual-conversion converter
  • Marchand balun
  • Schottky diode mixer
  • SiGe BiCMOS

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