@inproceedings{1de7269b04ba480c90f422513e45d9f6,
title = "60-GHz 0.18-μm CMOS Schottky-diode ring-mixer down-converter",
abstract = "A 60-GHz dual conversion down-converter based on n-type Silicon-based Schottky diodes has been demonstrated in the low-cost 0.18-μm CMOS technology. Four Schottky diodes in the ring shape configuration with two Marchand Baluns are used for the RF mixer while a double-balanced resistive mixer is used as the second down-converted IF mixer. As a result, the 60-GHz dual-conversion down-converter has conversion gain around 6 dB and noise figure around 18 dB in the RF frequency range of 57∼64 GHz. The total power consumption is 32.8 mW at 2.5 V.",
keywords = "Dual-conversion down-converter, Ring mixer, Schottky diode",
author = "Hsiao, {Yu Chih} and Chin-Chun Meng and Wang, {Ta Wei} and Huang, {Guo Wei}",
year = "2014",
month = nov,
language = "English",
series = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1202--1204",
booktitle = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",
address = "美國",
note = "2014 Asia-Pacific Microwave Conference, APMC 2014 ; Conference date: 04-11-2014 Through 07-11-2014",
}