@inproceedings{713f95f96803496fbc61c730b742abcc,
title = "5 V, 300 MSa/s, 6-bit Digital Gate Driver IC for GaN Achieving 69 % Reduction of Switching Loss and 60 % Reduction of Current Overshoot",
abstract = "A digital gate driver (DGD) is an important technology to reduce both switching loss and voltage and/or current overshoot. In this paper, a 5 V, 300 MSa/s, 6-bit DGD IC, where the gate current is varied in 64 levels for each of 16 3.3-ns time intervals, is developed using 180-nm BCD process for GaN FETs. The parameters for DGD are automatically optimized using a simulated annealing algorithm through repeated switching measurements. In the turn-on of GaN FETs at 48 V and 8 A, compared with the conventional single-step gate driving, the proposed gate drive using DGD reduces the switching loss from 3.9 μJ to 1.2 μJ by 69 % at the same the current overshoot of 3.4 A and reduces the current overshoot from 8.5 A to 3.4 A by 60 % at the same switching loss of 1.2 μJ, which clearly shows the advantage of DGD for GaN FETs.",
keywords = "digital gate driver, GaN, overshoot, switching loss",
author = "Ryunosuke Katada and Katsuhiro Hata and Yoshitaka Yamauchi and Wang, {Ting Wei} and Ryuzo Morikawa and Wu, {Cheng Hsuan} and Toru Sai and Chen, {Po Hung} and Makoto Takamiya",
note = "Publisher Copyright: {\textcopyright} 2021 The Institute of Electrical Engineering of Japan.; null ; Conference date: 30-05-2021 Through 03-06-2021",
year = "2021",
month = may,
day = "30",
doi = "10.23919/ISPSD50666.2021.9452225",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "55--58",
booktitle = "2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021",
address = "United States",
}