400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes

S. J. Chang, Cheng-Huang Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

400 nm In0.05Ga0.95N/GaN MQW light emitting diode (LED) structure and In0.05Ga0.95N/Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages91-94
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
DOIs
StatePublished - 1 Jan 2003
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 12 Sep 200314 Sep 2003

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Conference

Conference6th Chinese Optoelectronics Symposium, COES 2003
Country/TerritoryChina
CityHong Kong
Period12/09/0314/09/03

Keywords

  • Aluminum gallium nitride
  • Carrier confinement
  • Crystalline materials
  • Degradation
  • Electroluminescence
  • Epitaxial growth
  • Epitaxial layers
  • Gallium nitride
  • Light emitting diodes
  • Quantum well devices

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