3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

Chung Wei Hsu; Chia Chen Wan; I. Ting Wang; Mei Chin Chen; Chun Li Lo; Yao Jen Lee; Wen Yueh Jang; Chen Hsi Lin; Tuo-Hung Hou

doi:10.1109/IEDM.2013.6724601

3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

Chung Wei Hsu, Chia Chen Wan, I. Ting Wang, Mei Chin Chen, Chun Li Lo, Yao Jen Lee, Wen Yueh Jang, Chen Hsi Lin, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.

Original language	English
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Publisher	IEEE
Pages	10.4.1-10.4.4
Number of pages	4
ISBN (Print)	9781479923076
DOIs	https://doi.org/10.1109/IEDM.2013.6724601
State	Published - Dec 2013
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: 9 Dec 2013 → 11 Dec 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	9/12/13 → 11/12/13

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10.1109/IEDM.2013.6724601

Cite this

Hsu, C. W., Wan, C. C., Wang, I. T., Chen, M. C., Lo, C. L., Lee, Y. J., Jang, W. Y., Lin, C. H., & Hou, T.-H. (2013). 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 10.4.1-10.4.4). Article 6724601 (Technical Digest - International Electron Devices Meeting, IEDM). IEEE. https://doi.org/10.1109/IEDM.2013.6724601

@inproceedings{134514bbe59f41459a5027bde2c1b4da,

title = "3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current",

abstract = "The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.",

author = "Hsu, {Chung Wei} and Wan, {Chia Chen} and Wang, {I. Ting} and Chen, {Mei Chin} and Lo, {Chun Li} and Lee, {Yao Jen} and Jang, {Wen Yueh} and Lin, {Chen Hsi} and Tuo-Hung Hou",

year = "2013",

month = dec,

doi = "10.1109/IEDM.2013.6724601",

language = "English",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "IEEE",

pages = "10.4.1--10.4.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",

}

Hsu, CW, Wan, CC, Wang, IT, Chen, MC, Lo, CL, Lee, YJ, Jang, WY, Lin, CH & Hou, T-H 2013, 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724601, Technical Digest - International Electron Devices Meeting, IEDM, IEEE, pp. 10.4.1-10.4.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 9/12/13. https://doi.org/10.1109/IEDM.2013.6724601

3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current. / Hsu, Chung Wei; Wan, Chia Chen; Wang, I. Ting et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. IEEE, 2013. p. 10.4.1-10.4.4 6724601 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

AU - Hsu, Chung Wei

AU - Wan, Chia Chen

AU - Wang, I. Ting

AU - Chen, Mei Chin

AU - Lo, Chun Li

AU - Lee, Yao Jen

AU - Jang, Wen Yueh

AU - Lin, Chen Hsi

AU - Hou, Tuo-Hung

PY - 2013/12

Y1 - 2013/12

N2 - The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.

AB - The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.

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U2 - 10.1109/IEDM.2013.6724601

DO - 10.1109/IEDM.2013.6724601

M3 - Conference contribution

AN - SCOPUS:84894346480

SN - 9781479923076

T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

PB - IEEE

T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013

Y2 - 9 December 2013 through 11 December 2013

ER -

3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

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