3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x

Keyphrases

• Highly Reliable 100%
• Wake-up 100%
• HfZrOx 100%
• CMOS Technology 50%
• Effective Method 50%
• Orthorhombic Phase 50%
• Tetragonal 50%
• Strain Effect 50%
• High Polarization 50%
• 2D to 3D 50%
• Density Functional Calculations 50%
• Ferroelectric Capacitor 50%
• Vertical Sidewall 50%
• Endurance Cycle 50%
• Interface Orientation 50%
• Stress Engineering 50%
• Fast Sensing 50%
• Atomic Interface 50%
• Polarization Fraction 50%

Engineering

• Side Wall 100%
• Engineering 100%
• Strain Effect 100%
• Effective Stress Method 100%